FDP032N08 n-channel powertrench ? mosfet ?2008 fairchild semiconductor corporation FDP032N08 rev. c1 www.fairchildsemi.com 1 march 2013 FDP032N08 n-channel powertrench ? mosfet 75 v, 235 a, 3.2 m features ?r ds(on) = 2.5 m ( typ.)@ v gs = 10 v, i d = 75 a ? fast switching speed ? low gate charge ? high performance trench tec hnology for extremely low r ds(on) ? high power and current handling capability ? rohs compliant description this n-channel mosfet is pr oduced using fairchild semicon- ductor ? ?s adcanced powertrench ? process that has been tai- lored to minimize the on-state resistance while maintaining superior switching performance. applications ? synchronous rectification for atx / server / telecom psu ? battery protection circuit ? motor drives and uninterruptible power supplies d g s to-220 g s d mosfet maximum ratings t c = 25 o c unless otherwise noted* thermal characteristics symbol parameter FDP032N08 unit v dss drain to source voltage 75 v v gss gate to source voltage 20 v i d drain current - continuous (t c = 25 o c, silicon limited) - continuous (t c = 100 o c, silicon limited) - continuous (t c = 25 o c, package limited) 235* a 165* a 120 a i dm d r a i n c u r r e n t - p u l s e d (note 1) 940 a e as single pulsed avalanche energy (note 2) 1995 mj dv/dt peak diode recovery dv/dt (note 3) 6.0 v/ns p d power dissipation (t c = 25 o c) 375 w - derate above 25 o c2.5w/ o c t j , t stg operating and storage temperature range -55 to +175 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter FDP032N08 unit r jc thermal resistance, junction to case, max. 0.4 o c/w r cs thermal resistance, case to sink typ. 0.5 r ja thermal resistance, junction to ambient, max. 62.5 * calculated continuous current based on maximum allowable ju nction temperature. package limitation current is 120a.
FDP032N08 n-channel powertrench ? mosfet www.fairchildsemi.com 2 ?2008 fairchild semiconductor corporation FDP032N08 rev. c1 package marking and ordering information t c = 25 o c unless otherwise noted electrical characteristics off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics device marking device package reel size tape width quantity FDP032N08 FDP032N08 to-220 - - 50 symbol parameter test conditions min. typ. max. unit bv dss drain to source breakdown voltage i d = 250 a, v gs = 0v, t c = 25 o c75 - - v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 o c - 0.05 - v/ o c i dss zero gate voltage drain current v ds = 75v, v gs = 0v - - 1 a v ds = 75v, t c = 150 o c--500 i gss gate to body leakage current v gs = 20v, v ds = 0v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a 2.5 3.5 4.5 v r ds(on) static drain to source on resistance v gs = 10v, i d = 75a - 2.5 3.2 m g fs forward transconductance v ds = 10v, i d = 75a - 180 - s c iss input capacitance v ds = 25v, v gs = 0v f = 1mhz - 11400 15160 pf c oss output capacitance - 1360 1810 pf c rss reverse transfer capacitance - 595 800 pf q g(tot) total gate charge at 10v v ds = 60v, i d = 75a v gs = 10v (note 4) - 169 220 nc q gs gate to source gate charge - 60 - nc q gd gate to drain ?miller? charge - 47 - nc t d(on) turn-on delay time v dd = 37.5v, i d = 75a r gen = 25 , v gs = 10v (note 4) - 230 470 ns t r turn-on rise time - 191 392 ns t d(off) turn-off delay time - 335 680 ns t f turn-off fall time - 121 252 ns i s maximum continuous drain to source diode forward current - - 235 a i sm maximum pulsed drain to source diode forward current - - 940 a v sd drain to source diode forward voltage v gs = 0v, i sd = 75a - - 1.3 v t rr reverse recovery time v gs = 0v, i sd = 75a di f /dt = 100a/ s -53-ns q rr reverse recovery charge - 77 - nc notes: 1. repetitive rating: pulse width limited by maximum junction temperature 2. l = 0.71mh, i as = 75a, v dd = 50v, r g = 25 , starting t j = 25 c 3. i sd 75a, di/dt 200a/ s, v dd bv dss , starting t j = 25 c 4. essentially independent of operating temperature typical characteristics
FDP032N08 n-channel powertrench ? mosfet www.fairchildsemi.com 3 ?2008 fairchild semiconductor corporation FDP032N08 rev. c1 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 0.01 0.1 1 0.1 1 10 100 1000 *notes: 1. 250 s pulse test 2. t c = 25 o c v gs = 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v 5.0 v i d ,drain current[a] v ds ,drain-source voltage[v] 3000 2468 1 10 100 -55 o c 175 o c *notes: 1. v ds = 20v 2. 250 s pulse test 25 o c i d ,drain current[a] v gs ,gate-source voltage[v] 500 0.0 0.5 1.0 1.5 1 10 100 *notes: 1. v gs = 0v 2. 250 s pulse test 175 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 400 0 100 200 300 400 0.0020 0.0025 0.0030 *note: t c = 25 o c v gs = 20v v gs = 10v r ds(on) [ ] , drain-source on-resistance i d , drain current [a] 0 50 100 150 200 0 2 4 6 8 10 *note: i d = 75a v ds = 15v v ds = 37.5v v ds = 60v v gs , gate-source voltage [v] q g , total gate charge [nc] 0.1 1 10 100 1000 10000 100000 c oss c iss c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 80
FDP032N08 n-channel powertrench ? mosfet www.fairchildsemi.com 4 ?2008 fairchild semiconductor corporation FDP032N08 rev. c1 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. vs. temperature temperature figure 9. maximum safe operating area figure 10. maximum drain current v s . c a s e t e m p e r a t u r e figure 11 . transient thermal response curve -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 *notes: 1. v gs = 0v 2. i d = 10ma bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c ] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 *notes: 1. v gs = 10v 2. i d = 75a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c ] 25 50 75 100 125 150 175 0 50 100 150 200 250 limited by package i d , drain current [a] t c , case temperature [ o c] 0.1 1 10 100 0.1 1 10 100 1000 100 s 1ms 10ms 100ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) single pulse t c = 25 o c t j = 175 o c r jc = 0.40 o c/w dc 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 0.001 0.01 0.1 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 0.4 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [ z jc ] rectangular pulse duration [sec] 0.5 t 1 p dm t 2
FDP032N08 n-channel powertrench ? mosfet www.fairchildsemi.com 5 ?2008 fairchild semiconductor corporation FDP032N08 rev. c1 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
FDP032N08 n-channel powertrench ? mosfet www.fairchildsemi.com 6 ?2008 fairchild semiconductor corporation FDP032N08 rev. c1 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
FDP032N08 n-channel powertrench ? mosfet www.fairchildsemi.com 7 ?2008 fairchild semiconductor corporation FDP032N08 rev. c1 mechanical dimensions dimensions in millimeters to-220y03
FDP032N08 n-channel powertrench ? mosfet www.fairchildsemi.com 8 ?2008 fairchild semiconductor corporation FDP032N08 rev. c1 trademarks the following includes registered and unregistered trademarks and se rvice marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes withou t further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of th e application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s wo rldwide terms and conditions , specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized fo r use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a sign ificant injury of the user. 2. a critical component in any com ponent of a life support, device, or system whose failure to perform can be reasonably ex pected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? 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